? semiconductor components industries, llc, 2004 july, 2004 ? rev. 7 496 publication order number: ntd70n03r/d 72 a, 25 v, n ? channel dpak features ? planar hd3e process for fast switching performance ? low r ds(on) to minimize conduction loss ? low c iss to minimize driver loss ? low gate charge ? pb ? free packages are available maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 25 v dc gate ? to ? source voltage ? continuous v gs 20 v dc thermal resistance ? junction ? to ? case total power dissipation @ t c = 25 c drain current ? continuous @ t c = 25 c, chip ? continuous @ t c = 25 c, limited by package ? continuous @ t a = 25 c, limited by wires ? single pulse (t p = 10 s) r jc p d i d i d i d i dm 2.4 62.5 72.0 62.8 32 140 c/w w a a a a thermal resistance ? junction ? to ? ambient (note 1) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c r ja p d i d 80 1.87 12.0 c/w w a thermal resistance ? junction ? to ? ambient (note 2) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c r ja p d i d 110 1.36 10.0 c/w w a operating and storage temperature range t j , t stg ? 55 to 175 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 30 v dc , v gs = 10 v dc , i l = 12 a pk , l = 1 mh, r g = 25 ) e as 71.7 mj maximum lead temperature for soldering purposes, 1/8 from case for 10 s t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using 0.5 sq. in. pad size. 2. when surface mounted to an fr4 board using minimum recommended pad size. http://onsemi.com d s g n ? channel 1 gate 3 source 2 drain 4 drain dpak case 369aa style 2 marking diagrams 70n03 device code y = year ww = work week yww t70 n03 1 2 3 4 yww t70 n03 1 gate 3 source 2 drain 4 drain dpak case 369d style 2 1 2 3 4 25 v 5.6 m r ds(on) typ 72 a i d max v (br)dss see detailed ordering and shipping information in the package dimensions section on page 501 of this data sheet. ordering information
ntd70n03r http://onsemi.com 497 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) (v gs = 0 v dc , i d = 250 a dc ) temperature coefficient (positive) v (br)dss 25 ? 28 20.5 ? ? v dc mv/ c zero gate voltage drain current (v ds = 20 v dc , v gs = 0 v dc ) (v ds = 20 v dc , v gs = 0 v dc , t j = 150 c) i dss ? ? ? ? 1.5 10 a dc gate ? body leakage current (v gs = 20 v dc , v ds = 0 v dc ) i gss ? ? 100 na dc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 a dc ) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.5 4.0 2.0 ? v dc mv/ c static drain ? to ? source on ? resistance (note 3) (v gs = 4.5 v dc , i d = 20 a dc ) (v gs = 10 v dc , i d = 20 a dc ) r ds(on) ? ? 8.1 5.6 13 8.0 m forward transconductance (note 3) (v ds = 10 v dc , i d = 15 a dc ) g fs ? 27 ? mhos dynamic characteristics input capacitance c iss ? 1333 ? pf output capacitance (v ds = 20 v dc , v gs = 0 v, f = 1 mhz ) c oss ? 600 ? transfer capacitance f = 1 mhz) c rss ? 218 ? switching characteristics (note 4) turn ? on delay time t d(on) ? 6.9 ? ns rise time ( v gs = 10 v dc , v dd = 10 v dc , t r ? 1.3 ? turn ? off delay time (v gs = 10 v dc , v dd = 10 v dc , i d = 36 a dc , r g = 3 ) t d(off) ? 18.4 ? fall time t f ? 5.5 ? gate charge q t ? 13.2 ? nc (v gs = 5 v dc , i d = 36 a dc , v ds = 10 v dc ) ( note 3 ) q gs ? 3.3 ? v ds = 10 v d c ) (note 3) q ds ? 6.5 ? source ? drain diode characteristics forward on ? volta g e (i 20 a v 0 v ) (note 3) v sd v dc forward on ? voltage (i s = 20 a dc , v gs = 0 v dc ) (note 3) (i s = 20 a dc v gs = 0 v dc t j = 125 c) v sd ? 0.86 073 1.2 v dc (i s = 20 a dc , v gs = 0 v dc , t j = 125 c) ? 0.73 ? reverse recovery time t rr ? 15.6 ? ns (i s 36 a d v gs 0 v d t a ? 13.8 ? (i s = 36 a dc , v gs = 0 v dc , di s /dt = 100 a/ s) (note 3) t b ? 1.78 ? reverse recovery stored charge di s /dt 100 a/ s) (note 3) q rr ? 0.004 ? c 3. pulse test: pulse width = 300 s, duty cycle = 2%. 4. switching characteristics are independent of operating junction temperatures.
ntd70n03r http://onsemi.com 498 typical performance curves (t j = 25 c unless otherwise noted) 10 v 10 0.016 70 50 0.012 0.004 0 30 110 150 1.6 1.2 1.4 1.0 0.8 0.6 10,000 1,000,000 010 50 4 2 v ds , drain ? to ? source voltage (volts) i d , drain current (amps) 0 v gs , gate ? to ? source voltage (volts) figure 1. on ? region characteristics figure 2. transfer characteristics i d , drain current (amps) 2 0.04 8 6 0.02 0.01 0 410 figure 3. on ? resistance versus gate ? to ? source voltage v gs , gate ? to ? source voltage (volts) figure 4. on ? resistance versus drain current and gate voltage i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 5. on ? resistance variation with temperature t j , junction temperature ( c) figure 6. drain ? to ? source leakage current versus voltage v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 175 ? 50 50 25 0 ? 25 75 125 100 2 015 10 25 5 6 25 75 v ds 10 v t j = 25 c t j = ? 55 c t j = 175 c v gs = 10 v 175 v gs = 0 v i d = 36 a v gs = 10 v 100 0.05 t j = 100 c t j = 175 c 50 0 150 25 75 4 t j = 25 c t j = ? 55 c 20 10 8 v 4 v 6 v 3.8 v 5 v 4.5 v 2.0 8 1000 8 125 150 3 v 0 100 125 0.03 t j = 175 c 90 0.008 130 i d = 72 a t j = 25 c 1.8 150 100 100,000 6 4.2 v 3.6 v 3.4 v 3.2 v 2.8 v 2.6 v 2.4 v t j = 25 c
ntd70n03r http://onsemi.com 499 10 0 10 15 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 3000 1000 0 v gs v ds 1500 500 55 v gs = 0 v v ds = 0 v t j = 25 c c iss c oss c rss 2000 2500 c rss c iss figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge v gs 014 6 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) i d = 36 a t j = 25 c 10 2 3 20 0 q gd 5 12 v ds 8 24 qt 8 4 16 q gs 12 v ds , drain ? to ? source voltage (volts) figure 9. resistive switching time variation versus gate resistance r g , gate resistance (ohms) 1 10 100 1000 1 t, time (ns) 100 t r t d(off) t d(on) t f 10 v ds = 10 v i d = 36 a v gs = 10 v 80 0 0.4 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c figure 10. diode forward voltage versus current 0.6 0.8 1.6 10 20 30 1.0 1.2 40 60 50 70 1.4 figure 11. maximum rated forward biased safe operating area 0.1 1 100 v ds , drain ? to ? source voltage (volts) 100 i d , drain current (amps) r ds(on) limit thermal limit package limit 10 10 v gs = 20 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s
ntd70n03r http://onsemi.com 500 figure 12. thermal response r(t), effective transient thermal resistance (normalized) t, time ( s) 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
ntd70n03r http://onsemi.com 501 ordering information order number package shipping ? ntd70n03r dpak ? 3 75 units / rail ntd70n03rg dpak ? 3 (pb ? free) 75 units / rail ntd70n03rt4 dpak ? 3 2500 / tape & reel ntd70n03rt4g dpak ? 3 (pb ? free) 2500 / tape & reel ntd70n03r ? 1 dpak ? 3 straight lead 75 units / rail ntd70n03r ? 1g dpak ? 3 straight lead (pb ? free) 75 units / rail ntd70n03r ? 001 dpak 75 units / rail ntd70n03r ? 001g dpak (pb ? free) 75 units / tubes ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
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